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| P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 350 Volt VDS * RDS(on)=100 ZVP0535A D G S ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg E-Line TO92 Compatible VALUE -350 -50 -480 20 UNIT V mA mA V mW C 700 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current(1) Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Common Source Output Capacitance (2) Reverse Transfer Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL MIN. MAX. UNIT CONDITIONS. BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf 40 120 20 5 10 15 15 20 -120 100 -350 -1.5 -4.5 100 -20 -2 V V nA mA mA A ID=-1mA, VGS=0V ID=-1mA, VDS= VGS VGS= 20V, VDS=0V VDS=-350 V, VGS=0 VDS=-280 V, VGS=0V, T=125C(2) VDS=-25 V, VGS=-10V VGS=-10V,ID=-50mA VDS=-25V,ID=-50mA mS pF pF pF ns ns ns ns VDS=-25 V, VGS=0V, f=1MHz VDD -25V, ID=-50mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% 3-409 ( 2 ZVP0535A TYPICAL CHARACTERISTICS -700 -600 VGS= -10V -8V -160 -140 VGS= -10V -8V -6V -5V ID - Drain Current (mA) -500 -400 -300 -200 -100 0 0 -20 -40 -60 -80 ID - Drain Current (mA) -120 -100 -80 -60 -40 -20 0 -6V -5V -4V -100 -4V 0 -2 -4 -6 -8 -10 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics -10 VDS-Drain Source Voltage (Volts) -140 ID - Drain Current (mA) -120 -100 -80 -60 -40 -20 0 VDS=-10V -8 -6 ID= -4 -75mA -50mA -2 -25mA 0 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics Transfer Characteristics gfs-Forward Transconductance(mS) 100 60 50 40 30 20 10 VDS=-10V C-Capacitance (pF) 80 60 40 Ciss 20 Coss Crss -100 0 0 -20 -40 -60 -80 0 -20 -40 -60 -80 -100 -120 VDS-Drain Source Voltage (Volts) ID-Drain Current (mA) Capacitance v drain-source voltage Transconductance v drain current 3-410 ZVP0535A TYPICAL CHARACTERISTICS gfs-Forward Transconductance (mS) VGS-Gate Source Voltage (Volts) 60 50 40 30 20 10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 VDS=-10V 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 2.0 2.5 3.0 VDS= -100V -200V -350V ID= -250mA VGS-Gate Source Voltage (Volts) Q-Charge (nC) Transconductance v gate-source voltage Gate charge v gate-source voltage RDS(on)-Drain Source Resistance () 1000 2.4 Normalised RDS(on) and VGS(th) VGS=-4V -5V -6V -8V 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 100 -10V Dr e eR rc ou -S ain eR nc ta sis n) (o DS VGS=-10V ID=-50mA Gate Thresh old VGS=VDS ID=-1mA Voltage VG S(TH) 10 -1 -10 -100 -1000 0 20 40 60 80 100 120 140 160 180 ID-Drain Current (mA) T-Temperature (C) On-resistance v Gate-Source Voltage Normalised RDS(on) and VGS(th) vs Temperature 3-411 |
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